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1

Novel failure mechanism and improvement for split-gate trench MOSFET with large current under unclamped inductive switch stress

Tian, Ye, Yang, Zhuo, Xu, Zhiyuan, Liu, Siyang, Sun, Weifeng, Shi, Longxing, Zhu, Yuanzheng, Ye, Peng, Zhou, Jincheng

Journal:

Superlattices and Microstructures

Year:

2018

Language:

english

File:

PDF, 2.65 MB

english, 2018

2

A Review on Hot-Carrier-Induced Degradation of Lateral DMOS Transistor

Liu, Siyang, Sun, Weifeng, Qian, Qinsong, Wei, Jiaxing, Fang, Jiong, Li, Ting, Zhang, Chi, Shi, Longxing

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2018

Language:

english

File:

PDF, 4.38 MB

english, 2018

3

[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Failure Mechanism Investigations of Type II Short-Circuit in Trench Gate IGBT Device

Tong, Xin, Xu, Zhiyuan, Liu, Siyang, Wu, Wangran, Sun, Weifeng, Yang, Zhuo, Li, Shaohong

Year:

2018

Language:

english

File:

PDF, 3.25 MB

english, 2018

4

Design of a compact low-cost GPS antenna for high-overload applications

Sun, Siyang, Chen, Xiaochen, Xiao, Li, Liu, Zheng, An, Xudong, Wang, Ruixin, Zhu, Siting

Journal:

Microwave and Optical Technology Letters

Year:

2019

Language:

english

File:

PDF, 2.29 MB

english, 2019

5

The optimization of deep trench isolation structure for high voltage devices on SOI substrate

Qinsong Qian, Weifeng Sun, Dianxiang Han, Siyang Liu, Zhan Su, Longxing Shi

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 909 KB

english, 2011

6

A novel latch-up free SCR-LDMOS with high holding voltage for a power-rail ESD clamp

Pan, Hongwei, Liu, Siyang, Sun, Weifeng

Journal:

Journal of Semiconductors

Year:

2013

Language:

english

File:

PDF, 1.53 MB

english, 2013

7

Devices’ optimization against hot-carrier degradation in high voltage pLEDMOS transistor

Hong Wu, Qinsong Qian, Siyang Liu, Weifeng Sun, Longxing Shi

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 683 KB

english, 2010

8

Verification of Single-Pulse Avalanche Failure Mechanism for Double-Trench SiC Power MOSFETs

Wei, Jiaxing, Liu, Siyang, Zhao, Hangbo, Fu, Hao, Zhang, Xiaobing, Li, Shiyan, Sun, Weifeng

Journal:

IEEE Journal of Emerging and Selected Topics in Power Electronics

Year:

2020

Language:

english

File:

PDF, 1.73 MB

english, 2020

9

Investigation on the Degradation Mechanism for SiC Power MOSFETs under Repetitive Switching Stress

Wei, Jiaxing, Liu, Siyang, Lou, Rongcheng, Tang, Lizhi, Ye, Ran, Zhang, Long, Zhang, Xiaobing, Sun, Weifeng, Bai, Song

Journal:

IEEE Journal of Emerging and Selected Topics in Power Electronics

Year:

2019

Language:

english

File:

PDF, 1.47 MB

english, 2019

10

ESD robustness concern and optimization for high-voltage p-type LDMOS transistor with thin gate oxide used as the output driver

Liu, Siyang, Sun, Weifeng, Wang, Hao, Ye, Ran, Zhang, Chunwei

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.57 MB

english, 2014

11

Complete Avalanche Process and Failure Mechanism of Trench-Gate FS-IGBT Under Unclamped Inductive Switching by Using Infrared Visualization Method

Tong, Xin, Liu, Siyang, Sun, Weifeng, Wu, Jianhui

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 1.37 MB

2020

12

Genetic algorithm optimization of broadband microstrip antenna

Siyang Sun, Yinghua Lu, Jinling Zhang, Fangming Ruan

Journal:

Frontiers of Electrical and Electronic Engineering

Year:

2010

Language:

english

File:

PDF, 155 KB

english, 2010

13

[IEEE 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Chengdu, China (2017.7.4-2017.7.7)] 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Influence of forward current freewheeling time on di/dt robustness of SJ-MOSFET body diode

Tong, Xin, Yang, Zhuo, Tian, Ye, Bian, Fangjuan, Liu, Siyang, Sun, Weifeng, Zhu, Yuanzheng, Ye, Peng

Year:

2017

Language:

english

File:

PDF, 481 KB

english, 2017

14

Investigations of hot-carrier-induced degradation for 700 V n-LDMOS transistor under different stress conditions

Zhang, Chunwei, Liu, Siyang, Sun, Weifeng, Huang, Tingting, Yu, Chaohui

Journal:

IETE Journal of Research

Year:

2013

Language:

english

File:

PDF, 1.70 MB

english, 2013

15

Hot-Carrier-Induced On-Resistance Degradation of n-Type Lateral DMOS Transistor With Shallow Trench Isolation for High-Side Application

Weifeng Sun,, Chunwei Zhang,, Siyang Liu,, Longxing Shi,, Wei Su,, Aijun Zhang,, Shaorong Wang,, Shulang Ma,

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2015

Language:

english

File:

PDF, 686 KB

english, 2015

16

A numerical investigation of the airfoil-gust interaction noise in transonic flows: Acoustic processes

Zhong, Siyang, Zhang, Xin, Gill, James, Fattah, Ryu, Sun, Yuhao

Journal:

Journal of Sound and Vibration

Year:

2018

Language:

english

File:

PDF, 5.35 MB

english, 2018

17

CAA simulations of the leading edge noise of a heaving airfoil

Sun, Yuhao, Zhong, Siyang, Zhou, Teng, Huang, Xun, Zhang, Xin

Journal:

Journal of Sound and Vibration

Year:

2020

Language:

english

File:

PDF, 5.88 MB

english, 2020

18

Investigations on the Degradations of Double-Trench SiC Power MOSFETs Under Repetitive Avalanche Stress

Wei, Jiaxing, Liu, Siyang, Yang, Lanlan, Tang, Lizhi, Lou, Rongcheng, Li, Ting, Fang, Jiong, Li, Sheng, Zhang, Chi, Sun, Weifeng

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.95 MB

english, 2018

19

A Robust W-Shape-Buffer LIGBT Device With Large Current Capability

Qian, Qinsong, Liu, Siyang, Sun, Weifeng, Wang, Hao, Zhang, Chunwei

Journal:

IEEE Transactions on Power Electronics

Year:

2014

Language:

english

File:

PDF, 534 KB

english, 2014

20

An Isolated Industrial Power System Driven by Wind-Coal Power for Aluminum Productions: A Case Study of Frequency Control

Xu, Jian, Liao, Siyang, Sun, Yuanzhang, Ma, Xi-Yuan, Gao, Wenzhong, Li, Xiaomin, Gu, Junhe, Dong, Jianxun, Zhou, Mi

Journal:

IEEE Transactions on Power Systems

Year:

2015

Language:

english

File:

PDF, 1.53 MB

english, 2015

21

[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Interfacial damage extraction method for SiC power MOSFETs based on C-V characteristics

Wei, Jiaxing, Liu, Siyang, Ye, Ran, Chen, Xin, Song, Haiyang, Sun, Weifeng, Su, Wei, Ma, Shulang, Liu, Yuwei, Lin, Feng, Hou, Bo

Year:

2017

File:

PDF, 660 KB

2017

22

Policy solution and game analysis for addressing the challenge of developing public–private partnership energy project

Tang, Bowen, Xu, Jian, Sun, Yuanzhang, Zhou, Nan, Shen, Bo, Liao, Siyang, Liu, Yilu

Journal:

Environmental Research Letters

Year:

2019

Language:

english

File:

PDF, 957 KB

english, 2019

23

Layout Arrangement Concern for Lateral DMOS With Large Geometric Array Used as Output Device

Sun, Weifeng, Ye, Ran, Liu, Siyang, Wei, Jiaxing, Su, Wei, Lin, Feng, Sun, Guipeng, Lin, Zhongyu

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2017

Language:

english

File:

PDF, 2.45 MB

english, 2017

24

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - ESD failure mechanism and optimiztion for the LDMOS with low on-resistance and large geometric array used as output device

Ye, Ran, Liu, Siyang, Sun, Weifeng, Su, Wei, Lin, Feng, Sun, Guipeng, Lin, Zhongyu

Year:

2016

Language:

english

File:

PDF, 954 KB

english, 2016

25

[IEEE 2017 29th Chinese Control And Decision Conference (CCDC) - Chongqing, China (2017.5.28-2017.5.30)] 2017 29th Chinese Control And Decision Conference (CCDC) - Travel trajectories analysis based on call detail record data

Qin, Siyang, Zuo, Youchen, Wang, Yaguan, Sun, Xuan, Dong, Honghui

Year:

2017

Language:

english

File:

PDF, 780 KB

english, 2017

26

Filtering wideband slot antenna using split-ring resonator

Wang, Changhong, Sun, Siyang, Bu, Xiangyuan, Chen, Chaofan, Gao, Fei

Journal:

IEICE Electronics Express

Year:

2019

Language:

english

File:

PDF, 1.11 MB

english, 2019

27

Super Field Plate Technique That Can Provide Charge Balance Effect for Lateral Power Devices Without Occupying Drift Region

Zhang, Chunwei, Guo, Haijun, Chen, Zhenxiang, Yue, Wenjing, Li, Yang, Zhang, Long, Liu, Siyang, Sun, Weifeng

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 1.74 MB

2020

28

Analysis of simulation of multiterminal electro-optic modulator based on p-n junction in reverse bias

Xu, Kaikai, Liu, Siyang, Zhao, Jianming, Sun, Weifeng, Li, Guannpyng

Journal:

Optical Engineering

Year:

2015

Language:

english

File:

PDF, 3.05 MB

english, 2015

29

[IEEE 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Chengdu, China (2017.7.4-2017.7.7)] 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Electrical parameters shifts of 1.2kV 4H-SiC MOSFET under cosmic radiations

Li, Sheng, Tian, Ye, Wei, Jiaxing, Liu, Siyang, Sun, Weifeng

Year:

2017

Language:

english

File:

PDF, 388 KB

english, 2017

30

Reversible hydrocephalus from ventriculoperitoneal shunt dysfunction secondary to MRI exposure—a rare cause of functional decline in elderly

Au, Shu Yi Lydia, Sze, Yuen Lei, Ee, Ying Hui Dina, Sun, Siyang Ira, Low, Shiong Wen

Journal:

Journal of Electron Microscopy

Year:

2019

Language:

english

File:

PDF, 138 KB

english, 2019

31

Lightning Surge Robustness Analysis and Optimization for an LED Driver Based on a Flyback Converter

Liu, Siyang, Tong, Xin, Wei, Jiaxing, Sun, Weifeng, Yang, Zhuo, Ye, Peng, Zhu, Yuanzheng

Journal:

IEEE Transactions on Industrial Electronics

Year:

2020

File:

PDF, 1.48 MB

2020

32

[IEEE 2010 Asia-Pacific International Symposium on Electromagnetic Compatibility - Beijing, China (2010.04.12-2010.04.16)] 2010 Asia-Pacific International Symposium on Electromagnetic Compatibility - Some consideration on electromagnetic compitibility in can bus design of automobile

Fangming Ruan,, Siyang Sun,, Dlugosz, Tomasz, Ling Zhang,

Year:

2010

Language:

english

File:

PDF, 408 KB

english, 2010

33

Hot-Carrier-Induced Degradation and Optimization for Lateral DMOS With Split-STI-Structure in the Drift Region

Ye, Ran, Lu, Li, Liu, Siyang, Chen, Hongting, Wu, Haibo, Sun, Weifeng, Wei, Jiaxing, Lu, Shengli, Zhang, Long, Wu, Wangran, Su, Wei, Lin, Feng, Sun, Guipeng

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 3.23 MB

english, 2019

34

[IEEE 2010 Asia-Pacific International Symposium on Electromagnetic Compatibility - Beijing, China (2010.04.12-2010.04.16)] 2010 Asia-Pacific International Symposium on Electromagnetic Compatibility - Property of sub-process transition in short gap electrostatic discharge with electrode moving speed to target

Ruan, Fangming, Xiaolu Wang,, Feng Zhou,, Siyang Sun,, Dlugosz, Tomasz

Year:

2010

Language:

english

File:

PDF, 774 KB

english, 2010

35

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Investigation on hot-carrier-induced degradation for the n-type lateral DMOS with floating p-top layer

Sun, Weifeng, Zhang, Chunwei, Liu, Siyang, Su, Wei, Zhang, Aijun, Wang, Shaorong, Ma, Shulang, Huang, Yu

Year:

2014

Language:

english

File:

PDF, 874 KB

english, 2014

36

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Investigations on degradation and optimization of 1.2kV 4H-SiC MOSFET under repetitive unclamped inductive switching stress

Liu, Siyang, Sun, Weifeng, Qian, Qinsong, Gu, Chunde, Huang, Yu, Bai, Song, Chen, Gang, Huang, Runhua, Tao, Yonghong, Liu, Ao

Year:

2015

Language:

english

File:

PDF, 553 KB

english, 2015

37

The Three-Dimensional Structure of Mimivirus

Klose, Thomas, Kuznetsov, Yurii G., Xiao, Chuan, Sun, Siyang, McPherson, Alexander, Rossmann, Michael G.

Journal:

Year:

2010

Language:

english

File:

PDF, 610 KB

english, 2010

38

[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Comprehensive investigation on mechanical strain induced performance boosts in LDMOS

Wu, Wangran, Liu, Siyang, Zhu, Jing, Sun, Weifeng

Year:

2018

Language:

english

File:

PDF, 869 KB

english, 2018

39

[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Integrated GaN MIS-HEMT with Multi-Channel Heterojunction SBD Structures

Li, Sheng, Liu, Siyang, Zhang, Chi, Wei, Jiaxing, Zhang, Long, Sun, Weifeng, Zhu, Youhua, Zhang, Tingting, Wang, Dongsheng, Sun, Yinxia, Li, Yiheng, Zhu, Tinggang

Year:

2019

Language:

english

File:

PDF, 975 KB

english, 2019

40

A novel model of the high-voltage VDMOS for the circuit simulation

Liu, Siyang, Zhu, Rongxia, Jia, Kan, Huang, Dong, Sun, Weifeng, Zhang, Chunwei

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.07 MB

english, 2014

41

A novel area-efficiency multi-finger GGnMOS with high ESD robustness

Zhang, Chunwei, Liu, Siyang, Sun, Weifeng, Shi, Longxing

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 667 KB

english, 2015

42

[IEEE 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - Guilin, China (2014.10.28-2014.10.31)] 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Analysis of nonuniform damage for the fully isolated multi-finger rectifier lateral DMOS transistor in DC-DC converter

Yu, Bing, Liu, Siyang, Ye, Ran, Sun, Weifeng

Year:

2014

Language:

english

File:

PDF, 1.15 MB

english, 2014

43

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Investigation on Hot-Carrier-Induced degradation of STI-nLDMOS with two-step-oxide process for high side application

Wei, Jiaxing, Zhang, Chunwei, Liu, Siyang, Sun, Weifeng, Su, Wei, Zhang, Aijun, Ma, Shulang

Year:

2016

Language:

english

File:

PDF, 529 KB

english, 2016

44

Influence of Latch-Up Immunity Structure on ESD Robustness of SOI-LIGBT Used As Output Device

Ye, Ran, Liu, Siyang, Tian, Ye, Xue, Ying, Sun, Weifeng, Su, Wei, Lin, Feng, Sun, Guipeng, Ma, Shulang, Liu, Yuwei

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2018

Language:

english

File:

PDF, 2.01 MB

english, 2018

45

The Investigation of Electrothermal Characteristics of High-Voltage Lateral IGBT for ESD Protection

Qinsong Qian, Weifeng Sun, Shouming Wei, Siyang Liu, Longxing Shi

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2012

Language:

english

File:

PDF, 963 KB

english, 2012

46

A disigned method of the surface structure of suspended glass transport device based bionic structure of dragonfly wings

Gao, Siyang, Zhang, Bangcheng, Sun, Jianwei, Liu, Wenrui

Journal:

Industrial Lubrication and Tribology

Year:

2020

File:

PDF, 1.62 MB

2020

47

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Linear drain current degradations of FG-pLEDMOS transistor under different AC stress conditions

Qian, Qinsong, Sun, Weifeng, Liu, Siyang, Shi, Longxing, Su, Wei, Xu, Zhengxin, Ma, Shulang

Year:

2012

Language:

english

File:

PDF, 633 KB

english, 2012

48

[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - ESD failure analysis and robustness improvement for multi-STI-finger LDMOS used as output device

Ye, Ran, Liu, Siyang, Dai, Zhigang, Chen, Hongting, Wu, Wangran, Sun, Weifeng, Lu, Shengli, Su, Wei, Lin, Feng, Sun, Guipeng

Year:

2018

Language:

english

File:

PDF, 1.84 MB

english, 2018

49

High-temperature electrical performances and physics-based analysis of p-GaN HEMT device

Li, Sheng, Liu, Siyang, Tian, Ye, Zhang, Chi, Wei, Jiaxing, Tao, Xinyi, Li, Ningbo, Zhang, Long, Sun, Weifeng

Journal:

IET Power Electronics

Year:

2020

Language:

english

File:

PDF, 5.63 MB

english, 2020

50

Retrieval of Vertical Foliage Profile and Leaf Area Index Using Transmitted Energy Information Derived from ICESat GLAS Data

Cui, Lei, Jiao, Ziti, Zhao, Kaiguang, Sun, Mei, Dong, Yadong, Yin, Siyang, Li, Yang, Chang, Yaxuan, Guo, Jing, Xie, Rui, Zhu, Zidong, Li, Sijie

Journal:

Year:

2020

File:

PDF, 6.47 MB

2020

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